An instrument for measuring the electrical resistivity of single-crystal silicon by a four-probe method

被引：0
|
作者：
V. M. Vladimirov
E. F. Grinin
M. E. Sergii
V. N. Shepov
机构：
[1] Siberian Branch,Krasnoyarsk Scientific Center
[2] Russian Academy of Sciences,undefined
来源：
Measurement Techniques | 2010年 / 53卷
关键词：
resistivity; single-crystal silicon; four-probe method;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new instrument which enables the resistivity distribution over the surface of a wafer of single-crystal silicon with a diameter of up to 200 mm to be measured is described. The measurement is based on the fourprobe method.
引用
收藏
页码：538 / 541
页数：3
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