Investigation of dielectric properties of a Li4Ti5O12 ceramic matrix for microwave temperature sensing applications

被引:0
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作者
Marcelo Antonio Santos da Silva
Francisco Alekson Chaves Nobrega
Felipe Felix do Carmo
João Paulo Costa do Nascimento
Francisco Enilton Alves Nogueira
Antonio Jefferson Mangueira Sales
Ronaldo Santos da Silva
Sergei V. Trukhanov
Di Zhou
Charanjeet Singh
Antonio Sergio Bezerra Sombra
机构
[1] Universidade Federal Do Ceará (UFC),Departamento de Química Orgânica e Inorgânica, Centro de Ciências
[2] Instituto Federal de Educação,Laboratório de Telecomunicações e Ciências e Engenharia de Materiais (LOCEM), Departamento de Fisica
[3] Ciência E Tecnologia Do Ceará,Telecommunication Engineering Department
[4] PPGET,Group Functional Nanomaterials, Physics Department
[5] Universidade Federal Do Ceará (UFC),Smart Sensors Systems Laboratory
[6] Federal University of Ceará (UFC),Laboratory of Magnetic Films Physics, Scientific Practical Materials Research Centre
[7] Federal University of Sergipe,Electronic Materials Research Laboratory
[8] National University of Science and Technology MISiS,School of Electronics and Electrical Engineering
[9] NAS of Belarus,undefined
[10] Xi’an Jiaotong University,undefined
[11] Lovely Professional University,undefined
关键词
Li; Ti; O; ceramic; Dielectric properties; Numerical simulation; Temperature sensor;
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学科分类号
摘要
In this article, the dielectric properties of a Li4Ti5O12 (LTO) ceramic at the radio frequency (RF) and microwave (MW) regions were evaluated. X-ray diffraction showed that LTO was obtained without the presence of spurious and/or secondary phases. Complex impedance spectroscopy (CIS) analysis was conducted, whereas an activation energy (Ea) of 0.88 eV was observed. The temperature capacitance coefficient (TCC) was also calculated and demonstrated that LTO could be employed as a Class 1 ceramic capacitor. In the MW region, LTO presented ε’r = 25.4, tan δ = 5.7 × 10–4, and τf = -14.5 ppmºC−1, values that are interesting for devices that operate in the MW region. Numerical simulation demonstrated values of a realized gain of 4.78 dBi, a bandwidth of 227 MHz, and a radiation efficiency of 98%. Moreover, LTO was evaluated as a temperature sensor operating in the MW region and demonstrated a sensitivity of -0.06 MHz ºC−1. The values presented demonstrate that LTO could be employed in devices that operate in RF and MW regions.
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页码:355 / 362
页数:7
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