Lateral photoconductivity in structures with Ge/Si quantum dots

被引：0
|
作者：
V. Yu. Panevin
A. N. Sofronov
L. E. Vorobjev
D. A. Firsov
V. A. Shalygin
M. Ya. Vinnichenko
R. M. Balagula
A. A. Tonkikh
P. Werner
B. Fuhrman
G. Schmidt
机构：
[1] St. Petersburg State Polytechnical University,Martin
[2] Max Planck Institute of Microstructure Physics,Luther
[3] Interdisziplinäres Zentrum für Materialwissenschaften (IZM),Universität Halle
[4] Institut für Physik,Wittenberg
[5] Russian Academy of Sciences,Martin
来源：
Semiconductors | 2013年 / 47卷
关键词：
Photocurrent Spectrum; Photoconductivity Spectrum; Valence Band Discontinuity; Reverse Trapping; Lateral Photoconductivity;
D O I：
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学科分类号：
摘要：
The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent spectral features related to the transitions of holes from the quantum dot (QD) ground state are revealed in the optical spectra. Temperature photoconductivity quenching caused by the reverse trapping of nonequilibrium free holes by the QD bound state is observed. The obtained experimental data make it possible to determine the height of the surface band bending at the QD heterointerface.
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页码：1574 / 1577
页数：3
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