Quantum Mechanical Study of Double Gate MOSFET with Core Insulator in Channel for Immune Short Channel Effects

In the present work, effect of quantum confinement on the performance of channel engineered Core Insulator Double Gate (CIDG) MOSFET is examined. The characteristics of MOSFETs scaled to sub 20 nm channel lengths can no longer be sufficiently explained by the classical theory. As the size of transistor has reached to nanoscale regime; quantum effects sway the Ioff, Ion, Ion/Ioff ratio, electron concentration, transconductance and Short Channel Effects (SCEs). The present work reports the effect of quantum confinement on the characteristics of CIDG MOSFET. Thickness of core insulator and active region of CIDG MOSFET has been optimally selected for betterment of SCEs with quantum mechanical models. The CIDG MOSFET has been found to show very less variation in its SCEs at such scaled channel lengths. The evoked values of Ioff, Ion/Ioff, Vth, Drain Induced Barrier Lowering (DIBL), and Subthreshold Slope (SS) present 22.88% decrement, 13.94% decrement, 7.81% decrement, 3.34% increment and 2.75% increment, respectively. The p type CIDG MOSFET has also been designed and used for implementation of CMOS inverter circuit.