Active and passive rectification methods for US-powered IMDsA comparison in a 28-nm bulk CMOS technology

被引:0
|
作者
Andrea Ballo
Alfio Dario Grasso
Marco Privitera
机构
[1] University of Catania,Department of Electrical, Electronics and Computer Science Engineering
关键词
Active rectifiers; Implanted medical devices; Passive rectifiers; Ultrasound energy harvesting;
D O I
暂无
中图分类号
学科分类号
摘要
In this paper the design of power management integrated circuits for the energy harvesting of ultrasound waves in implanted biomedical devices is addressed. In particular, the paper focuses on the main building block of the power conversion stage which is represented by the AC/DC converter. After an in-depth analytical description of cross-coupled passive and active rectifiers, a detailed design procedure for the common-gate comparator is introduced. Then a comparison between the different discussed topologies is carried through simulation results using a 28-nm standard CMOS technology. The results provide useful design guidelines in choosing the best topology according to the design specifications.
引用
收藏
页码:21 / 34
页数:13
相关论文
共 16 条
  • [1] Active and passive rectification methods for US-powered IMDs A comparison in a 28-nm bulk CMOS technology
    Ballo, Andrea
    Grasso, Alfio Dario
    Privitera, Marco
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2023, 117 (1-3) : 21 - 34
  • [2] A 0.63 pJ/bit Fully-Digital BPSK Demodulator for US-powered IMDs downlink in a 28-nm bulk CMOS technology
    Privitera, Marco
    Ballo, Andrea
    Grasso, Alfio Dario
    PRIME 2022: 17TH INTERNATIONAL CONFERENCE ON PHD RESEARCH IN MICROELECTRONICS AND ELECTRONICS, 2022, : 29 - 32
  • [3] A High Efficiency and High Power Density Active AC/DC Converter for Battery-Less US-Powered IMDs in a 28-nm CMOS Technology
    Ballo, Andrea
    Grasso, Alfio Dario
    Privitera, Marco
    IEEE ACCESS, 2024, 12 : 7063 - 7070
  • [4] A 28 nm Bulk CMOS Fully Digital BPSK Demodulator for US-Powered IMDs Downlink Communications
    Ballo, Andrea
    Grasso, Alfio Dario
    Privitera, Marco
    ELECTRONICS, 2022, 11 (05)
  • [5] Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K
    Beckers, Arnout
    Jazaeri, Farzan
    Enz, Christian
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01): : 1007 - 1018
  • [6] Wideband Millimeter-Wave Active and Passive Mixers in 28 nm Bulk CMOS Technology
    Parveg, Dristy
    Varonen, Mikko
    Karkkainen, Mikko
    Karaca, Denizhan
    Vahdati, Ali
    Halonen, Kari A. I.
    2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2015, : 116 - 119
  • [7] Experimental Comparison of Integrated Transformers in a 28 nm Bulk CMOS Technology
    Rimmelspacher, J.
    Breun, S.
    Werthof, A.
    Geiselbrechtinger, A.
    Weigel, R.
    Issakov, V.
    2018 48TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2018, : 1097 - 1100
  • [8] A 6.3-ppm/°C, 100-nA Current Reference With Active Trimming in 28-nm Bulk CMOS Technology
    Ballo, Andrea
    Grasso, Alfio Dario
    Privitera, Marco
    IEEE ACCESS, 2022, 10 : 108342 - 108353
  • [9] A 6.3-ppm/°C, 100-nA Current Reference With Active Trimming in 28-nm Bulk CMOS Technology
    University of Catania, Dipartimento di Ingegneria Elettrica Elettronica e Informatica, Catania
    95125, Italy
    IEEE Access, (108342-108353):
  • [10] The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology
    Sangani, D.
    Diaz-Fortuny, J.
    Bury, E.
    Kaczer, B.
    Gielen, G.
    2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS, 2023,