Copper oxides: kinetics of formation and semiconducting properties. Part I. Polycrystalline copper and copper-gold alloys

The anodic formation of Cu(I) and Cu(II) oxides on polycrystalline copper and copper-gold alloys (4 and 15 at% Au) in deoxygenated 0.1 M KOH was examined by voltammetry, chronoamperometry, and chronopotentiometry with a synchronous registration of photocurrent and photopotential, in situ spectroscopy of photocurrent as well as XPS and SEM measurements. The band gap of p-Cu2O is 2.2 eV for indirect optical transitions independent of the concentration of gold in Cu-Au alloy. It grows on CuOH or n-Cu2O underlayer. The increase of anodic potential results in a thickening of oxide film which is a mixture of Cu(I) and Cu(II) oxides. The latter is a p-type semiconductor with a low photosensitivity. The rate of oxide formation on the alloys is lower than on copper. The structure-dependent properties of the oxide phase on the alloys and copper are different. Copper is prone to corrosive oxidation even in deoxygenated alkaline solution by the traces of molecular oxygen. The corrosive growth of Cu(I) oxide film occurs according to the parabolic law. After the cathodic polarization, the surface of copper remains free of corrosive oxide no longer than 15–20 min. The preliminary anodic formation even of a thin Cu2O film as well as the alloying of copper with gold suppresses the corrosive oxidation of copper.