Ferroelectric photovoltaic effect and resistive switching behavior modulated by ferroelectric/electrode interface coupling

The anomalous photovoltaic effect and resistive switching behaviors in ferroelectric materials attract much attention in recent years. Dozens of researches revealed that the two effects coexist and affect each other in electrode/ferroelectric/electrode structures. Therefore, the conductive mechanisms and research progresses of the two effects were discussed in this study, which suggested the interface coupling effect caused by polarization states led to switchable photovoltaic and different resistance states. On the other hand, electrode/ferroelectric/electrode structures have great potential in the application of high-density memories, and a novel non-volatile optoelectronic memory which can write multiple storage states and read information non-destructively can be realized by exploiting the two effects properly.