Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection

被引：0
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作者：
Zhenwu Shi
Lu Wang
Honglou Zhen
Wenxin Wang
Hong Chen
机构：
[1] Chinese Academy of Sciences,Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics
[2] Chinese Academy of Sciences,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics
来源：
Nanoscale Research Letters | / 8卷
关键词：
Molecular beam epitaxy; Quantum well infrared detector; InGaAs/AlGaAs quantum well;
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摘要：
InGaAs/AlGaAs multiple quantum wells used for 4.3 μm mid-wavelength infrared quantum well infrared detectors were grown by molecular beam epitaxy. In composition loss was observed and quantitatively studied by high-resolution X-ray diffraction technology. By this In composition loss effect, the energy band engineering on the photo-response wavelength is not easily achieved. A thin AlGaAs barrier grown at low temperature is used to suppress the In atom desorption, and this growth process was verified to be able to adjust the photo-response wavelength as designed by energy band engineering in the photocurrent spectrum.
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