Use of optical emission spectroscopy to investigate the process of fabrication ofa-Si:H films in a combined silane-containing discharge

被引：0

作者：

Grunskii, D.I. ^{[1
]}

机构：

[1] Belarusian State University of Information Science and Radioelectronics, 6 P. Brovka Str., Minsk, Belarus

来源：

Journal of Applied Spectroscopy | 2000年 / 67卷 / 04期

关键词：

a-Si:H - Actinometry - Deposition of films - Emission bands - Emission lines - Hydrogenated silicon - Intensity of emission - Lines and bands - Optical-emission spectroscopy - Spectra's;

D O I：

10.1007/BF02681287

中图分类号：

学科分类号：

摘要：

The results of investigations carried out with the aid of optical emission spectroscopy and concerned with the process of deposition of amorphous hydrogenated silicon (a-Si:H) films in a combined discharge are presented. Correlations between the intensities of emission lines and bands and the rate of the deposition of films were established. To control the quality of films, it is proposed to record changes in the intensity of the atomic hydrogen line (Hβ) during the deposition of a-Si:H. A comparison of plasma radiation spectra for different types of discharge was made.

引用

页码：573 / 578

页数：5

共 4 条

[1] Evolution of a-Si:H to nc-Si:H transition of hydrogenated silicon films deposited by trichlorosilane using principle component analysis of optical emission spectroscopy
Wang, Song-Ho
Chang, Hsueh-Er
Lee, Chien-Chieh
Fuh, Yiin-Kuen
Li, Tomi T.
MATERIALS CHEMISTRY AND PHYSICS, 2020, 240 (240)
[2] In-situ optical emission spectroscopy diagnostic of plasma ignition impact on crystalline silicon passivation by a-Si:H films
Meddeb, Hosny
Bearda, Twan
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Poortmans, Jef
SUPERLATTICES AND MICROSTRUCTURES, 2016, 96 : 253 - 258
[3] Facile fabrication of eugenol-containing polysiloxane films with good optical properties and excellent thermal stability via Si-H chemistry
Yi, Minghao
Chen, Xunjun
Shuttleworth, Peter S.
Tan, Lewen
Ruan, Yunqing
Xu, Yixin
Zheng, Jiefeng
Wu, Shufang
Hu, Sen
Xie, Simin
Guan, Zhixing
Yin, Guoqiang
Cui, Yingde
JOURNAL OF MATERIALS CHEMISTRY C, 2021, 9 (25) : 8020 - 8028
[4] Determination of radical densities by optical emission spectroscopy during the ECR plasma deposition of Si-C-N:H films using TMS as a precursor
Welzel, T
Dani, I
Richter, F
PLASMA SOURCES SCIENCE & TECHNOLOGY, 2002, 11 (03): : 351 - 359

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