Measurement of the luminescence decay times of PbS quantum dots in the near-IR spectral range

被引：0

作者：

P. S. Parfenov

A. P. Litvin

A. V. Baranov

E. V. Ushakova

A. V. Fedorov

A. V. Prudnikov

M. V. Artemyev

机构：

[1] St. Petersburg State University of Information Technologies,Institute of Physicochemical Problems

[2] Mechanics,undefined

[3] and Optics,undefined

[4] Belarusian State University,undefined

来源：

Optics and Spectroscopy | 2012年 / 112卷

关键词：

PbTe; Porous Matrix; Luminescence Decay; Tetrachloromethane; Luminescence Decay Time;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Methods for recording luminescence decay times of semiconductor PbS quantum dots (QDs) with optical transitions in the near-IR spectral range have been analyzed. A measuring complex for spectral and kinetic analysis in the near-IR range (0.8–2.0 μm) in the time interval from several tens of nanoseconds to several tens of microseconds is described. In this complex, a semiconductor picosecond laser is used as an excitation source; luminescence decay times are recorded by a fast InGaAs photodiode, a high-speed amplifier, and a high-frequency oscilloscope; and the measurement results are multiply averaged (up to a million times) by a program. The technical features of this method are discussed and compared with the characteristics of techniques based on photon counting or application of more powerful radiation sources, and the limitations on sensitivity are analyzed. The results of measuring the luminescence decay kinetics of PbS QDs 2.7–7.6 nm in size prepared in the form of solutions and incorporated into matrices are reported.

引用

页码：868 / 873

页数：5

共 50 条

[1] Measurement of the luminescence decay times of PbS quantum dots in the near-IR spectral range
Parfenov, P. S.
Litvin, A. P.
Baranov, A. V.
Ushakova, E. V.
Fedorov, A. V.
Prudnikov, A. V.
Artemyev, M. V.
OPTICS AND SPECTROSCOPY, 2012, 112 (06) : 868 - 873
[2] PbS quantum dots with stable efficient luminescence in the near-IR spectral range
Bakueva, L
Gorelikov, I
Musikhin, S
Zhao, XS
Sargent, EH
Kumacheva, E
ADVANCED MATERIALS, 2004, 16 (11) : 926 - 929
[3] Colloidal silicon quantum dots: synthesis and luminescence tuning from the near-UV to the near-IR range
Ghosh, Batu
Shirahata, Naoto
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2014, 15 (01)
[4] Note: Near infrared spectral and transient measurements of PbS quantum dots luminescence
Parfenov, P. S.
Litvin, A. P.
Ushakova, E. V.
Fedorov, A. V.
Baranov, A. V.
Berwick, K.
REVIEW OF SCIENTIFIC INSTRUMENTS, 2013, 84 (11):
[5] Thiol-stabilized PbS quantum dots with stable luminescence in the infrared spectral range
Nakashima, Seisuke
Hoshino, Ai
Cai, Junjiang
Mukai, Kohki
JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 542 - 545
[6] The Luminescence of Pd and Pt Benzohydroporphyrazines in the Near-IR Range
Pershukevich, P. P.
Volkovich, D., I
Makarova, E. A.
Lukyanets, E. A.
Solovyov, K. N.
OPTICS AND SPECTROSCOPY, 2020, 128 (11) : 1789 - 1799
[7] The Luminescence of Pd and Pt Benzohydroporphyrazines in the Near-IR Range
P. P. Pershukevich
D. I. Volkovich
E. A. Makarova
E. A. Lukyanets
K. N. Solovyov
Optics and Spectroscopy, 2020, 128 : 1789 - 1799
[8] GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range
E. V. Kunitsyna
I. A. Andreev
G. G. Konovalov
E. V. Ivanov
A. A. Pivovarova
N. D. Il’inskaya
Yu. P. Yakovlev
Semiconductors, 2018, 52 : 1215 - 1220
[9] GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range
Kunitsyna, E. V.
Andreev, I. A.
Konovalov, G. G.
Ivanov, E. V.
Pivovarova, A. A.
Il'inskaya, N. D.
Yakovlev, Yu. P.
SEMICONDUCTORS, 2018, 52 (09) : 1215 - 1220
[10] Characteristics of a Silicon Avalanche Photodiode for the Near-IR Spectral Range
Aruev, P. N.
Ber, B. Ya
Gorokhov, A. N.
Zabrodskii, V. V.
Kazantsev, D. Yu.
Nikolaev, A. V.
Filimonov, V. V.
Shvarts, M. Z.
Sherstnev, E. V.
TECHNICAL PHYSICS LETTERS, 2019, 45 (08) : 780 - 782

← 1 2 3 4 5 →