Hexagonal boron nitride heterostructures go large

被引：0
|
作者：
Don N. Futaba
机构：
[1] National Institute of Advanced Science and Technology (AIST),Nano Carbon Device Research Center
来源：
Nature Electronics | 2023年 / 6卷
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摘要：
Multilayer hexagonal boron nitride can be synthesized over large areas and used to enhance mobility in graphene heterostructures, illustrating the potential of the material as an insulator in commercial two-dimensional electronics.
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页码：104 / 105
页数：1
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