A WENO-Solver for the 1D Non-Stationary Boltzmann–Poisson System for Semiconductor Devices

被引：0

作者：

Carrillo J.A. ^{[1
]}

Gamba I.M. ^{[2
]}

Majorana A. ^{[3
]}

Shu C.-W. ^{[4
]}

机构：

[1] Departamento de Matemática Aplicada, Universidad de Granada, Granada

[2] Department of Mathematics, University of Texas at Austin

[3] Dipartimento di Matematica e Informatica, Universita' di Catania, Catania

[4] Division of Applied Mathematics, Brown University, Providence, 02912, RI

来源：

Journal of Computational Electronics | 2002年 / 1卷 / 03期

关键词：

Boltzmann equation for semiconductors; spherical coordinate system; WENO scheme;

D O I：

10.1023/A:1020751624960

中图分类号：

学科分类号：

摘要：

In this work we present preliminary results of a high order WENO scheme applied to a new formulation of the Boltzmann equation (BTE) describing electron transport in semiconductor devices with a spherical coordinate system for the phase velocity space. The problem is two dimensional in the phase velocity space and one dimensional in the physical space, plus the time variable driving to steady states. The new formulation avoids the singularity due to the spherical coordinate system. © 2002, Kluwer Academic Publishers.

引用

页码：365 / 370

页数：5

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