The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers

被引：0
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作者：
N. A. Sobolev
B. Ya. Ber
D. Yu. Kazantsev
A. E. Kalyadin
K. V. Karabeshkin
V. M. Mikoushkin
V. I. Sakharov
I. T. Serenkov
E. I. Shek
E. V. Sherstnev
N. M. Shmidt
机构：
[1] Russian Academy of Sciences,Ioffe Physical Technical Institute
来源：
Technical Physics Letters | 2018年 / 44卷
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摘要：
Secondary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the defect structure of epitaxial GaAs layers implanted with 250-keV N+ ions at doses of 5 × 1014–5 × 1016 cm–2. It was found that no amorphization of the layers being implanted occurs at doses exceeding the calculated amorphization threshold, a concentration of point defects that is formed is substantially lower than the calculated value, and a characteristic specific feature of the defect concentration profiles is the high defect concentration in the surface layer.
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页码：574 / 576
页数：2
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