Photodetectors based on CuInS2

被引：0
|
作者：
S. V. Bulyarsky
L. N. Vostretsova
S. A. Gavrilov
机构：
[1] Ulyanovsk State University,
[2] National Research University of Electronic Technology “MIET”,undefined
来源：
Semiconductors | 2016年 / 50卷
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摘要：
It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS2 and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 × 1016 cm–2.
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页码：106 / 111
页数：5
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