Anomalous solubility of implanted nitrogen in heavily boron-doped silicon

被引：0
|
作者：
D. I. Tetelbaum
E. I. Zorin
N. V. Lisenkova
机构：
[1] Nizhni Novgorod Physicotechnical Institute at Lobachevskii State University,
来源：
Semiconductors | 2004年 / 38卷
关键词：
Nitrogen; Silicon; Boron; Elevated Temperature; Nitrogen Atom;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is established that an anomalously high electron concentration can be attained in heavily boron-doped silicon using ion implantation followed by implantation with nitrogen at an elevated temperature; the concentration of electrons can exceed that of boron. A model of this phenomenon is suggested that is based on the reaction of displacing boron atoms from the lattice sites by silicon self-interstitials with subsequent filling of the vacancies with nitrogen atoms (so that donor centers are formed).
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页码：775 / 777
页数：2
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