The effect of charge-carrier drift in the built-in quasi-electric field on the emission spectrum for graded-gap semiconductors

被引:0
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作者
V. F. Kovalenko
A. Yu. Mironchenko
S. V. Shutov
机构
[1] National Academy of Sciences of Ukraine,Institute of Semiconductor Physics, Kherson Branch
来源
Semiconductors | 2002年 / 36卷
关键词
Recombination; Emission Spectrum; Magnetic Material; Electromagnetism; Transport Mechanism;
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摘要
The effect of bulk (τ) and radiative (τr) charge-carrier lifetimes on the degree of spatial separation of the regions of the carriers’ generation and radiative recombination in graded-gap semiconductors with the drift transport mechanism in the built-in quasi-electric field of the crystal was investigated experimentally and theoretically. It was found that the degree of spatial separation increases with increasing τ and/or τr. The effect of spatial separation of the regions of radiative recombination, which correspond to transport mechanisms with various τr, was observed. The data obtained are related to the coordinate dependence of recombination probability for graded-gap semiconductors.
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页码:185 / 188
页数:3
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