Metalorganic chemical vapor deposition of aluminum from tetramethylethylenediamine alane

Tetramethylethylenediamine alane (TMEDAA) was synthesized by ligand displacement reaction of dimethylethylamine alane (DMEAA) with N,N,N’N’-tetramethylethylendiamine (TMEDA), and the chemical vapor deposition of aluminum film from TMEDAA in the temperature range of 140–260°C has been studied. The maximum deposition rate of Al film from TMEDAA was 140 nm/min at 210°C and the apparent activation energy over a substrate temperature range of 140–210°C is about 58.6 kJ/mol. Al films were deposited on TiN/Si substrate and electrical resistivity values in the range 5–35 μΩcm were obtained. The incorporation of carbon and oxygen, and surface roughness were increased as the substrate temperature was increased. The Al films with a preferred orientation of (1 1 1) were obtained over a wide range of substrate temperature.