MoS2 is a typical two-dimensional material with promising optical and electrical properties. The realization of ferromagnetism in MoS2 is important for its applications in semiconductor spintronics. A facile technique should be developed to induce the ferromagnetism in MoS2, and the possible extrinsic contribution should be avoided. In this paper, flower-like MoS2 nanostructures were fabricated by the hydrothermal method. X-ray diffraction spectra show the 1 T/2H mixed phases of as-prepared MoS2 nanostructures, which changes to pure 2H structure after the O plasma treatment. Raman spectra confirm the existence of Mo–O bonding, which is further confirmed by the X-ray photoelectron spectra after the O plasma treatment. Magnetization measurements at 300 K show the weak ferromagnetism in the as-prepared MoS2, with saturated ferromagnetic magnetization of 0.0012 emu/g. After the O plasma treatment, the weak ferromagnetism is strongly enhanced with saturated ferromagnetic magnetization of 0.0343 emu/g. First principle calculation has been performed to disclose the possible origin of ferromagnetism. Significant overlapping between the density of states of O and Mo, or O and S has been observed. The magnetic contribution from Mo and S is negligible, while O takes the main role for the enhanced ferromagnetism.
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Southeast Univ, Sch Phys, Nanjing 211189, Peoples R ChinaSoutheast Univ, Sch Phys, Nanjing 211189, Peoples R China
Wang, Bao
Zhang, Daoyu
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Southeast Univ, Sch Phys, Nanjing 211189, Peoples R ChinaSoutheast Univ, Sch Phys, Nanjing 211189, Peoples R China
Zhang, Daoyu
Wang, Hong
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Southeast Univ, Sch Phys, Nanjing 211189, Peoples R ChinaSoutheast Univ, Sch Phys, Nanjing 211189, Peoples R China
Wang, Hong
Zhao, Huihui
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Southeast Univ, Sch Phys, Nanjing 211189, Peoples R ChinaSoutheast Univ, Sch Phys, Nanjing 211189, Peoples R China
Zhao, Huihui
Liu, Ruobai
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Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R ChinaSoutheast Univ, Sch Phys, Nanjing 211189, Peoples R China
Liu, Ruobai
Li, Qi
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Southeast Univ, Sch Phys, Nanjing 211189, Peoples R ChinaSoutheast Univ, Sch Phys, Nanjing 211189, Peoples R China
Li, Qi
Zhou, Shengqiang
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Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Bautzner Land Str 400, D-01328 Dresden, GermanySoutheast Univ, Sch Phys, Nanjing 211189, Peoples R China
Zhou, Shengqiang
Du, Jun
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Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
Natl Lab Solid State Microstruct, Nanjing 210008, Peoples R ChinaSoutheast Univ, Sch Phys, Nanjing 211189, Peoples R China
Du, Jun
Xu, Qingyu
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Southeast Univ, Sch Phys, Nanjing 211189, Peoples R China
Natl Lab Solid State Microstruct, Nanjing 210008, Peoples R ChinaSoutheast Univ, Sch Phys, Nanjing 211189, Peoples R China
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Int Iberian Nanotechnol Lab, Nanostruct Mat Grp, Av Mestre Jose Veiga, P-4715330 Braga, Portugal
Def Met Res Lab, Electron Microscopy Grp, Hyderabad 500058, IndiaInt Iberian Nanotechnol Lab, Nanostruct Mat Grp, Av Mestre Jose Veiga, P-4715330 Braga, Portugal
Saha, Sabyasachi
Banobre-Lopez, Manuel
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Int Iberian Nanotechnol Lab INL, Nanomed Grp, Adv Magnet Theranost Nanostruct Lab, Av Mestre Jose Veiga, P-4715330 Braga, PortugalInt Iberian Nanotechnol Lab, Nanostruct Mat Grp, Av Mestre Jose Veiga, P-4715330 Braga, Portugal
Banobre-Lopez, Manuel
Bondarchuk, Oleksandr
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Int Iberian Nanotechnol Lab INL, Adv Electron Microscopy Imaging & Spect, Av Mestre Jose Veiga, P-4715330 Braga, PortugalInt Iberian Nanotechnol Lab, Nanostruct Mat Grp, Av Mestre Jose Veiga, P-4715330 Braga, Portugal
Bondarchuk, Oleksandr
Fernandez-Rossier, Joaquin
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Int Iberian Nanotechnol Lab INL, QuantaLab, Av Mestre Jose Veiga, P-4715330 Braga, PortugalInt Iberian Nanotechnol Lab, Nanostruct Mat Grp, Av Mestre Jose Veiga, P-4715330 Braga, Portugal
Fernandez-Rossier, Joaquin
Deepak, Francis Leonard
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Int Iberian Nanotechnol Lab, Nanostruct Mat Grp, Av Mestre Jose Veiga, P-4715330 Braga, PortugalInt Iberian Nanotechnol Lab, Nanostruct Mat Grp, Av Mestre Jose Veiga, P-4715330 Braga, Portugal