Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

被引：0
|
作者：
K. D. Mynbaev
A. M. Smirnov
N. L. Bazhenov
N. N. Mikhailov
V. G. Remesnik
M. V. Yakushev
机构：
[1] Ioffe Institute,
[2] ITMO University,undefined
[3] A.V. Rzhanov Institute of Semiconductor Physics of SB RAS,undefined
来源：
Journal of Electronic Materials | 2020年 / 49卷
关键词：
HgCdTe; luminescence; defects; alloy disorder;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Optical transmission, photoluminescence and photoconductivity were used to study Hg1−xCdxTe with x = 0.7–0.8 (bandgap 0.8–1.1 eV at 300 K) grown by molecular-beam epitaxy. The studied material, which included layers used as spacers and barriers in potential- and quantum-well structures, showed a considerable degree of alloy disorder similar to narrower-bandgap HgCdTe grown by the same method. The observed disorder seemed to have no effect on the structural properties of the material and its optical absorption. Optimization of the growth technology of wider-bandgap HgCdTe should help improve the quality of potential- and quantum-well structures based on this material.
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页码：4642 / 4646
页数：4
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