Photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures grown using rare-earth elements for the 1.1–2.4 μm spectral range

Photodiodes sensitive in the wavelength range of 1.1–2.4 μm have been created based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures with a narrow-gap n-GaInAsSb layer (Eg ≅ 0.5 eV) grown in the presence of a rare-earth element (holmium). The electron concentration in the narrow-gap layer is n = 1 × 1016 cm−3, which is about one-fourth of that in an analogous structure grown without the rare-earth element. The proposed structure is characterized by increased quantum efficiency and response speed.