Analysis on the process of ZAO films by DC magnetron reactive sputtering

被引：0
|
作者：
Feng Lu
ChengHai Xu
LiShi Wen
机构：
[1] Shenyang Jianzhu Uinversity,School of Transportation and Mechanical Engineering
[2] Northeastern University,School of Mechanical Engineering & Automation
[3] Chinese Academy of Sciences,Institute of Metal Research
来源：
Science China Technological Sciences | 2011年 / 54卷
关键词：
ZAO film; resistivity; transmissivity;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure, optical and electrical properties was studied. Through optimizing the process parameters, an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films, the resistivity of the ZAO film is as low as 4.5×10−4 Ω·cm and the average transmissivity in the visible region is around 80%, the optical and electrical properties meet the application requirements.
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页码：28 / 32
页数：4
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