Metallization in the molten and solid state and phase diagrams of the GeSe2 and GeS2 under high pressure

被引:0
|
作者
V. V. Brazhkin
E. Bychkov
M. V. Kondrin
机构
[1] Russian Academy of Sciences,Vereshchagin Institute of High Pressure Physics
[2] Universite du Littoral,LPCA, UMR 8101 CNRS
来源
JETP Letters | 2014年 / 100卷
关键词
Phase Diagram; JETP Letter; Metallic State; GeSe; High Pressure Phase;
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摘要
We found that under high pressure, the GeSe2 and GeS2 melts pass into the metallic state. In the vicinity of the melting curves, their metallization begins at 3.5 and 7 GPa, respectively. The position of the semiconductor-metal transition line on the phase diagram for GeSe2 liquid is established. The GeS2-II and GeSe2-III high-pressure crystalline modifications are semiconductors, whereas the GeSe2-III modification at pressures exceeding 3.5–4 GPa is a metal (σ ≈ 103 Ω−1 cm−1). The (P, T) phase diagrams for these compounds are constructed in the pressure range up to 10 GPa. Metallization during the GeSe2-II-GeSe2-III transition is evidently responsible for the small jump of entropy and the corresponding almost vertical slope of the transition line.
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页码:451 / 454
页数:3
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