Atomistic simulation of InGaN/GaN quantum disk LEDs

被引：1
|
作者：
Marco Lopez
Fabio Sacconi
Matthias Auf der Maur
Alessandro Pecchia
Aldo Di Carlo
机构：
[1] University of Rome “Tor Vergata”,Department of Electronic Engineering
来源：
Optical and Quantum Electronics | 2012年 / 44卷
关键词：
Optoelectronics properties; GaN nanocolumn; InGaN quantum disk; Atomistic simulation; Tight-binding;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this work electronic and optoelectronic properties of InGaN/GaN nanocolumn quantum disk LEDs have been studied with the multiscale simulation tool tiberCAD. Calculations have been performed with an atomistic tight-binding model. Results shows that emission energies have a minor dependence on the nanocolumn dimension while In concentration in the active region is a critical parameter.
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页码：89 / 94
页数：5
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