Performance Evaluation & Linearity Distortion Analysis for Plasma- Assisted Dual-Material Carbon Nanotube Field Effect Transistor with a SiO2-HfO2 Stacked Gate-Oxide Structure (DM-SGCNFET)

This work demonstrates the simulation analysis of a novel device Plasma-Assisted Dual-Material Stacked Gate-Oxide Carbon Nanotube Field Effect Transistor (DM-SGCNFET) with a stacked gate oxide structure consisting of two oxides - SiO2 and HfO2. The performance metric of the simulated device is compared with a SiO2 based similar device (DM-CNFET) for varying sets of plasma parameters that corresponds to different values of channel length. Both the devices feature a PECVD grown vertically aligned semiconducting carbon nanotube implemented as the channel material. The comprehensive analysis delineates that the DM-SGCNFET offers enhanced values of drain current, transconductance, output conductance, early voltage, gain, gate capacitance, better switching ratio, and reduced channel resistance as compared to DM-CNFET. The novel structure contemplating a dual-material gate and a high-k dielectric gate stack in CNT based transistors warrants as an appropriate device for digital and analog applications providing high efficiency. The paper further explores the DM-SGCNFET device for linearity distortion performance by evaluating gm2, gm3, VIP2, VIP3, IIP3, IMD3 and 1-dB compression point for altering values of plasma parameters.