The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap

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作者
E. Kirstein
D. R. Yakovlev
M. M. Glazov
E. A. Zhukov
D. Kudlacik
I. V. Kalitukha
V. F. Sapega
G. S. Dimitriev
M. A. Semina
M. O. Nestoklon
E. L. Ivchenko
N. E. Kopteva
D. N. Dirin
O. Nazarenko
M. V. Kovalenko
A. Baumann
J. Höcker
V. Dyakonov
M. Bayer
机构
[1] Experimentelle Physik 2,Department of Chemistry and Applied Biosciences, Laboratory of Inorganic Chemistry
[2] Technische Universität Dortmund,undefined
[3] Ioffe Institute,undefined
[4] Russian Academy of Sciences,undefined
[5] ETH Zürich,undefined
[6] Department of Advanced Materials and Surfaces,undefined
[7] Laboratory for Thin Films and Photovoltaics,undefined
[8] Empa—Swiss Federal Laboratories for Materials Science and Technology,undefined
[9] Experimental Physics VI,undefined
[10] Julius-Maximilian University of Würzburg,undefined
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摘要
The Landé or g-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI3, MAPb(Br0.5Cl0.5)3, MAPb(Br0.05Cl0.95)3, FAPbBr3, FA0.9Cs0.1PbI2.8Br0.2, MA=methylammonium and FA=formamidinium) and all-inorganic (CsPbBr3) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10 T at cryogenic temperatures. Further, we use first-principles density functional theory (DFT) calculations in combination with tight-binding and k ⋅ p approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.
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