Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping

被引：0
|
作者：
R. Groenen
E. R. Kieft
J. L. Linden
M. C. M. Van de Sanden
机构：
[1] Eindhoven University of Technology,Department of Applied Physics
[2] TNO TPD,undefined
[3] Division Models and Processes,undefined
来源：
Journal of Electronic Materials | 2006年 / 35卷
关键词：
Spectroscopic ellipsometry; plasma-enhanced chemical vapor deposition; transparent conducting oxide; zinc oxide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Aluminum-doped zinc oxide films exhibiting a rough surface morphology are deposited on glass substrates utilizing expanding thermal plasma. Spectroscopic ellipsometry is used to evaluate optical and electronic film properties. The presence of aluminum donors in doped films is confirmed by a shift in the zinc oxide bandgap energy from 3.32 to 3.65 eV. In combination with transmission reflection measurements in the visible and NIR ranges, charge carrier densities, optical mobilities, and film resistivities have been obtained from the free carrier absorption. Film resistivities are consistent with direct measurements, values as low as 6.0×10−4 ω cm have been obtained. The interdependence of electrical conductivity, film composition, and film morphology is addressed.
引用
收藏
页码：711 / 716
页数：5
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