Growth and Characterization of High-Quality Dielectric Sputtered Zinc Oxide Films from the First Principle

被引:0
|
作者
Anil Kurhekar
Prakash R. Apte
Siddharth Duttagupta
机构
[1] Indian Institute of Technology Bombay,Department of Electrical Engineering
来源
关键词
ZnO film; Dielectric sputter; AFM; Scanning electron microscopy; Fourier transform infrared spectroscopy;
D O I
暂无
中图分类号
学科分类号
摘要
In this article, we investigate the effect of thermal treatment on a piezoelectric material, zinc oxide, which has found numerous applications in sensors and actuators. Even though the exact mechanisms rendering electrical properties are less known, we suspect that the thermal treatments are responsible for improvement of electrical characteristics of the deposited thin films. We establish that the thermal agitation is responsible for improvement of orders of magnitude in electrical characteristics of sputtered ZnO thin films. The surface quality of the thin films deposited is process dependent. ZnO films were deposited using a dielectric sputtering method, on oxidized silicon 100 n-type wafers. Further, these films were thermally annealed in oxygen ambient at 600 °C in a tube furnace with 2 mL/min pressure. It is observed that, after thermal annealing, the quality of the films is improved by orders of magnitude. The luminance, crystalline quality, and surface morphology of these thin films was measured with atomic force microscopy, scanning electron microscopy with BSD detector (BSD-SEM), and Fourier transform infrared spectroscopy (FTIR). The results infer that the film’s surface is very smooth and dense. The surface roughness is improved by 1.3149 nm from 7.882 nm prior to thermal annealing to post-annealing surface roughness with 6.5671 nm. Post-thermal annealing process reveals average grain size was 50 nanometers; the surface roughness is reduced to 6.5671 nm. A significant improvement in electrical current-voltage characteristics was recorded with I-V curve. It is suspected to be due to substantial enhancement in electrical conductivity as a result of thermal treatment and improved spectral response recorded a FTIR peak shift of 1 wave number in total. The FTIR peak shift is suspected to be due to evaporation and reduction in oxygen vacancies due to thermal annealing process. The post-annealed ZnO films will be used for actuation in the future.
引用
收藏
页码:665 / 672
页数:7
相关论文
共 50 条
  • [1] Growth and Characterization of High-Quality Dielectric Sputtered Zinc Oxide Films from the First Principle
    Kurhekar, Anil
    Apte, Prakash R.
    Duttagupta, Siddharth
    BRAZILIAN JOURNAL OF PHYSICS, 2014, 44 (06) : 665 - 672
  • [2] Growth and Characterization of Indium Doped Zinc Oxide Films Sputtered from Powder Targets
    彭丽萍
    FANG Liang
    ZHAO Yan
    WU Weidong
    RUAN Haibo
    KONG Chunyang
    JournalofWuhanUniversityofTechnology(MaterialsScience), 2017, 32 (04) : 866 - 870
  • [3] Growth and Characterization of Indium Doped Zinc Oxide Films Sputtered from Powder Targets
    Peng Liping
    Fang Liang
    Zhao Yan
    Wu Weidong
    Ruan Haibo
    Kong Chunyang
    JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 2017, 32 (04): : 866 - 870
  • [4] Growth and characterization of indium doped zinc oxide films sputtered from powder targets
    Liping Peng
    Liang Fang
    Yan Zhao
    Weidong Wu
    Haibo Ruan
    Chunyang Kong
    Journal of Wuhan University of Technology-Mater. Sci. Ed., 2017, 32 : 866 - 870
  • [5] MOLECULAR-BEAM DEPOSITION OF HIGH-QUALITY SILICON-OXIDE DIELECTRIC FILMS
    CHAND, N
    JOHNSON, JE
    OSENBACH, JW
    LIANG, WC
    FELDMAN, LC
    TSANG, WT
    KRAUTTER, HW
    PASSLACK, M
    HULL, R
    SWAMINATHAN, V
    JOURNAL OF CRYSTAL GROWTH, 1995, 148 (04) : 336 - 344
  • [6] HIGH-QUALITY ULTRATHIN DIELECTRIC FILMS GROWN ON SILICON IN A NITRIC-OXIDE AMBIENT
    YAO, ZQ
    HARRISON, HB
    DIMITRIJEV, S
    SWEATMAN, D
    YEOW, YT
    APPLIED PHYSICS LETTERS, 1994, 64 (26) : 3584 - 3586
  • [7] High quality aluminium doped zinc oxide target synthesis from nanoparticulate powder and characterisation of sputtered thin films
    Isherwood, P. J. M.
    Neves, N.
    Bowers, J. W.
    Newbatt, P.
    Walls, J. M.
    THIN SOLID FILMS, 2014, 566 : 108 - 114
  • [8] High-Quality Sputtered BiFeO3 for Ultrathin Epitaxial Films
    Ichinose, Tomohiro
    Miura, Daisuke
    Naganuma, Hiroshi
    ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (11) : 4836 - 4848
  • [9] HIGH-QUALITY HOMOEPITAXIAL GROWTH OF DIAMOND FILMS
    VITTON, JP
    GARENNE, JJ
    TRUCHET, S
    DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) : 713 - 717
  • [10] Growth of high-quality ruthenium films on sapphire
    Majer, Lena N.
    Smink, Sander
    Braun, Wolfgang
    Wang, Hongguang
    van Aken, Peter A.
    Mannhart, Jochen
    Hensling, Felix V. E.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2024, 42 (05):