Improvement microwave dielectric properties of Zn2SnO4 ceramics by substituting Sn4+ with Si4+

The microwave dielectric properties of Zn2(Sn(1−x)Six)O4 ceramics were examined with a view to their exploitation for mobile communication. The Zn2(Sn(1−x)Six)O4 ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the Zn2(Sn(1−x)Six)O4 ceramics revealed no significant variation of phase with sintering temperatures. A maximum density of 6.24 g/cm3 was obtained for Zn2(Sn0.93Si0.07)O4 ceramic, sintered at 1,175 °C for 4 h. Dielectric constant (ɛr) of 8.12, quality factor (Q × f) of 55,500 GHz, and temperature coefficient of resonant frequency (τf) of −119.3 ppm/°C were obtained for Zn2(Sn0.93Si0.07)O4 ceramics that were sintered at 1,175 °C for 4 h.