Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films

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作者
Robbyn Trappen
A. C. Garcia-Castro
Vu Thanh Tra
Chih-Yeh Huang
Wilfredo Ibarra-Hernandez
James Fitch
Sobhit Singh
Jinling Zhou
Guerau Cabrera
Ying-Hao Chu
James M. LeBeau
Aldo H. Romero
Mikel B. Holcomb
机构
[1] West Virginia University,Department of Physics and Astronomy
[2] Université de Liège,Physique Théorique des Matériaux
[3] Universidad Industrial de Santander,Department of Physics
[4] Cra. 27 Cll. 9,Institute of Physics
[5] National Chiao Tung University,Department of Mechanical & Aerospace Engineering
[6] West Virginia University,Department of Materials Science and Engineering
[7] Facultad de Ingeniería-BUAP,undefined
[8] Apartado Postal J-39,undefined
[9] North Carolina State University,undefined
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关键词
Surface Valence; Expected Bulk Value; LSMO Layers; Thin Film LSMO; Polar Catastrophe;
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摘要
The Mn valence in thin film La0.7Sr0.3MnO3 was studied as a function of film thickness in the range of 1–16 unit cells with a combination of non-destructive bulk and surface sensitive X-ray absorption spectroscopy techniques. Using a layer-by-layer valence model, it was found that while the bulk averaged valence hovers around its expected value of 3.3, a significant deviation occurs within several unit cells of the surface and interface. These results were supported by first principles calculations. The surface valence increases to up to Mn3.7+, whereas the interface valence reduces down to Mn2.5+. The change in valence from the expected bulk value is consistent with charge redistribution due to the polar discontinuity at the film-substrate interface. The comparison with theory employed here illustrates how this layer-by-layer valence evolves with film thickness and allows for a deeper understanding of the microscopic mechanisms at play in this effect. These results offer insight on how the two-dimensional electron gas is created in thin film oxide alloys and how the magnetic ordering is reduced with dimensionality.
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