Solar Cell;
Carbon Concentration;
Oxygen Impurity;
Carbon Impurity;
Global Simulation;
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摘要:
Multicrystalline silicon has now become the main material in the photovoltaic market because of its low production cost and the relative high conversion efficiency of solar cells made from this material. Effective control of carbon and oxygen impurities in the crystal is required for the production of a high-quality component. In order to reduce impurity levels in a unidirectional solidification furnace, it is proposed to add a crucible cover to the casting process. Results from numerical simulations indicate a marked reduction of carbon impurity in a multicrystalline silicon ingot. The effect of crucible cover material on impurities in multicrystalline silicon was also investigated. These results show that the carbon concentration within the silicon ingot can be reduced by 10 times if the cover is made from carbon and by 1,000 times if the cover is made from tungsten. These results show that an effective and economical method for designing a cover is to use carbon and deposit a thin layer of tungsten on it. Experimental tests have also been carried out by placing a tungsten cover above the crucible. Results indicated that the carbon impurity has significantly decreased; however, the measured carbon concentration in the crystal is larger than the theoretically predicted value, despite the use of a crucible cover. A theoretical analysis has shown that this difference is due to a reaction between the crucible and the graphite susceptor. Furthermore, global simulations have shown that this reaction has a marked effect on carbon and oxygen impurities. When the carbon activity on the surface of the graphite susceptor increases, both oxygen and carbon impurities in crystal increase rapidly. Therefore, the production of high-purity multicrystalline silicon can be improved by designing a crucible cover with a thin layer of tungsten on it and by setting a free space between the silica crucible and the graphite susceptor to prevent reaction between them.
机构:
Kyushu Univ, Grad Sch Engn, Fukuoka 8168580, JapanKyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
Matsuo, Hitoshi
Ganesh, R. Bairava
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Kyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, IndiaKyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
Ganesh, R. Bairava
Nakano, Satoshi
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机构:
Kyushu Univ, Appl Mech Res Inst, Fukuoka 8168580, JapanKyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
Nakano, Satoshi
Liu, Lijun
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机构:
Kyushu Univ, Appl Mech Res Inst, Fukuoka 8168580, Japan
Xi An Jiao Tong Univ, Natl Engn Res Ctr Fluid Machinery & Compressors, Sch Energy & Power Engn, Xian 710049, Peoples R ChinaKyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
Liu, Lijun
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Arafune, Koji
Ohshita, Yoshio
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机构:
Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, JapanKyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
Ohshita, Yoshio
Yamaguchi, Masafumi
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机构:
Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, JapanKyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
Yamaguchi, Masafumi
Kakimoto, Koichi
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机构:
Kyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
Kyushu Univ, Appl Mech Res Inst, Fukuoka 8168580, JapanKyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
机构:
Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R ChinaXi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China
Li, Zaoyang
Liu, Lijun
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机构:
Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaXi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China
Liu, Lijun
Ma, Wencheng
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机构:
Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R ChinaXi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China
Ma, Wencheng
Kakimoto, Koichi
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机构:
Kyushu Univ, Appl Mech Res Inst, Kasuga, Fukuoka 8168580, JapanXi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China
机构:
Kyushu Univ, Grad Sch Engn, Fukuoka 8168580, JapanKyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
Matsuo, Hitoshi
Hisamatsu, Sho
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机构:
Kyushu Univ, Grad Sch Engn, Fukuoka 8168580, JapanKyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
Hisamatsu, Sho
Kangawa, Yoshihiro
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机构:
Kyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
Kyushu Univ, Res Inst Appl Mech, Fukuoka 8168580, JapanKyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
Kangawa, Yoshihiro
Kakimoto, Koichi
论文数: 0引用数: 0
h-index: 0
机构:
Kyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan
Kyushu Univ, Res Inst Appl Mech, Fukuoka 8168580, JapanKyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan