Electrical characterizations of Neutron-irradiated SiC Schottky diodes

被引：0

作者：

Geunwoo Ko

Hong-Yeol Kim

Joona Bang

Jihyun Kim

机构：

[1] Korea University,Department of Chemical and Biological Engineering

来源：

Korean Journal of Chemical Engineering | 2009年 / 26卷

关键词：

Neutron Irradiation; Silicon Carbide; Diode;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.

引用

页码：285 / 287

页数：2

共 50 条

[1] Electrical characterizations of Neutron-irradiated SiC Schottky diodes
Ko, Geunwoo
Kim, Hong-Yeol
Bang, Joona
Kim, Jihyun
KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2009, 26 (01) : 285 - 287
[2] Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes
Zhu, Min
Ren, Yuan
Zhou, Leidang
Chen, Jiaxiang
Guo, Haowen
Zhu, Liqi
Chen, Baile
Chen, Liang
Lu, Xing
Zou, Xinbo
MICROELECTRONICS RELIABILITY, 2021, 125
[3] Neutron-irradiated Schottky diodes with self-assembled InAs quantum dots: Optical and electrical properties
Schramm, A.
Tukiainen, A.
Pessa, M.
Konetzni, C.
Heyn, Ch.
Hansen, W.
JOURNAL OF APPLIED PHYSICS, 2009, 105 (10)
[4] Electrical Properties of Neutron-irradiated Silicon and GaAs Commercial Diodes
Omar, Nuurul Iffah Che
Hasbullah, Nurul Fadzlin
Rashid, Nahrul Khair Alang Md
Abdullah, Jaafar
2012 IEEE SYMPOSIUM ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (ISIEA 2012), 2012,
[5] DEFECTS IN NEUTRON-IRRADIATED SIC
NAGESH, V
FARMER, JW
DAVIS, RF
KONG, HS
APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1138 - 1140
[6] Capacitive effects in neutron-irradiated silicon diodes
McPherson, M
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 488 (1-2): : 100 - 109
[7] DEGRADATION OF LUMINESCENCE IN NEUTRON-IRRADIATED GAAS DIODES
PETREE, MC
APPLIED PHYSICS LETTERS, 1963, 3 (04) : 67 - 67
[8] DEFECTS INTRODUCED IN NEUTRON-IRRADIATED ESAKI DIODES
PIERCE, CB
KANTZ, AD
JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1496 - &
[9] Bistable damage in neutron-irradiated silicon diodes
Cindro, V
Kolar, J
Kramberger, G
Mikuz, M
Zavrtanik, M
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 476 (03): : 565 - 568
[10] Neutron and Proton Radiation Damage and Isothermal Annealing of Irradiated SiC Schottky Power Diodes
Kulisek, Jonathan A.
Blue, Thomas E.
SPACE, PROPULSION & ENERGY SCIENCES INTERNATIONAL FORUM SPESIF-2009, 2009, 1103 : 478 - 485

← 1 2 3 4 5 →