Gallium-doped zinc oxide films deposited using an unbalanced magnetron sputtering system

被引：0
|
作者：
A. N. Zakharov
K. V. Oskomov
S. V. Rabotkin
A. A. Solov’ev
N. S. Sochugov
机构：
[1] Russian Academy of Sciences,Institute of High
来源：
Technical Physics | 2010年 / 55卷
关键词：
Electrical Resistivity; Hall Mobility; System Axis; Coil Current; Electromagnetic Coil;
D O I：
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中图分类号：
学科分类号：
摘要：
Gallium-doped zinc oxide films are deposited using an unbalanced magnetron sputtering system. The films are deposited by dc sputtering of a conducting ceramic target in an argon atmosphere. The substrate temperature is 150°C. The film surface morphology is studied by scanning electron microscopy and atomic force microscopy. As the degree of magnetron unbalance increases, the electrophysical properties of the films deposited along the system axis are shown to improve, and the distribution of the film electrical resistivity over the substrate surface becomes more uniform.
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页码：719 / 723
页数：4
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