The modification of ultraviolet illumination to resistive switching behaviors in Ga2O3 memory device

The modulating resistive switching behaviors accompanied ultraviolet (UV) photo response phenomena are demonstrated by changing the UV light intensities in the Ti/Ga2O3/Pt memory device. The analysis of the photodecay processes indicate that the UV light can induce the photo-generated carriers and oxygen defects, affecting the Schottky barrier and the photodecay time. On the other hand, the photo-generated carriers and oxygen defects can decrease the Schottky barrier and benefit to the formation of multiple conducting filaments (CFs) under the electric field, effectively decreasing the forming and switching voltages. Meanwhile, the different UV light intensity can affect the CFs’ size, realizing the multilevel memory in the Ga2O3-based device.