Electronic Structure and Magnetic Properties of Zinc-Blende Co-Doped GaN with N Vacancies

被引：0

作者：

N. Mamouni

A. Benyoussef

A. El Kenz

H. Ez-Zahraouy

M. Bououdina

机构：

[1] Université Mohammed V-Agdal,Laboratoire de Magnétisme et de Physique des Hautes Energies, URAC 12, Département de Physique, Faculté des Sciences

[2] MAScIR,Institute of Nanomaterials and Nanotechnology

[3] Hassan II Academy of Sciences and Technologies,Nanotechnology Center

[4] University of Bahrain,Department of Physics, College of Science

[5] University of Bahrain,undefined

来源：

Journal of Superconductivity and Novel Magnetism | 2013年 / 26卷

关键词：

Ab initio calculation; Band structure model; DMS; GaN;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The electronic structure and magnetic properties of zinc-blende structure of (Ga,Co)N phase with N vacancy defects are investigated using the Korringa–Kohn–Rostoker (KKR) method combined with coherent potential approximation (CPA). The results show that (Ga,Co)N phase is ferromagnetically polarized with an enhancement of the polarization and that the electronic structure can be modified simply by changing the concentration of N vacancies. Moreover, the (Ga,Co)N with high density of N vacancies shows a drastic increase of the magnetic moment of cobalt in the parent GaN compound, to reach a maximum value of 1.7 μB/Co at 8 at.%, which is in good agreement with the experimental values reported in the literature.

引用

页码：663 / 667

页数：4

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