Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator

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作者
Seung-Hyun Roh
Su-Keun Eom
Gwang-Ho Choi
Myoung-Jin Kang
Dong-Hwan Kim
Il-Hwan Hwang
Kwang-Seok Seo
Jae-Gil Lee
Young-Chul Byun
Ho-Young Cha
机构
[1] Seoul National University,Department of Electrical and Computer Engineering
[2] University of Texas at Dallas,Department of Materials Science and Engineering
[3] Hongik University,School of Electronic and Electrical Engineering
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AlGaN/GaN; Normally-off; Atomic layer deposition; SiO; N;
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摘要
We have developed a nitrogen-incorporated silicon oxide (SiOxNy) deposition process using plasma enhanced atomic layer deposition (PEALD) for the gate insulator of recessed-gate Al-GaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. The SiOxNy film deposited on a recessed GaN surface exhibited a breakdown field of 13.2 MV/cm and a conduction band offset of 3.37 eV, which are the highest values reported for GaN MIS structures to the best of our knowledge. The fabricated normally-off transistor exhibited very promising characteristics such as a threshold voltage of 2.2 V, a maximum drain current density of 428 mA/mm, and a breakdown voltage of 928 V.
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页码:185 / 190
页数:5
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