Mechanical properties of amorphous silicon carbonitride thin films at elevated temperatures

被引:0
|
作者
Radim Ctvrtlik
Marwan S. Al-Haik
Valeriy Kulikovsky
机构
[1] Palacky University,RCPTM, Joint Laboratory of Optics
[2] Virginia Tech,Department of Biomedical Engineering and Mechanics
[3] Academy of Sciences of the Czech Republic,Institute of Physics
[4] Academy of Sciences of Ukraine,Institute for Problems of Materials Science
来源
关键词
Elastic Modulus; High Nitrogen Content; Nanoindentation Test; Thermal Drift; Nanoindentation Experiment;
D O I
暂无
中图分类号
学科分类号
摘要
The mechanical properties of amorphous silicon carbonitride (a-SiCxNy) films with various nitrogen content (y = 0–40 at.%) were investigated in situ at elevated temperatures up to 650 °C in inert atmosphere. A SiC film was measured also at 700 °C in air. The hardness and elastic modulus were evaluated using instrumented nanoindentation with thermally stable cubic boron nitride Berkovich indenter. Both the sample and the indenter were separately heated during the experiments to temperatures of 300, 500, and 650 °C. Short duration high temperature creep tests (1200 s) of the films were also carried out. The results revealed that the room temperature hardness and elastic modulus deteriorate with the increase of the nitrogen content. Furthermore, the hardness of both the a-SiC and the a-SiCN films with lower nitrogen content at 300 °C drops to approx. 77 % of the corresponding room temperature values, while it reduces to 69 % for the a-SiCN film with 40 at.% of nitrogen. Further increase of temperature is accompanied with minor reduction in hardness except for the a-SiCN film with highest nitrogen content, where the hardness decreases at a much faster rate. Upon heating up to 500 °C, the elastic modulus of the a-SiCN film decreases, while it increases at 650 °C due to the pronounced effect of short-range ordering. The steady-state creep rate increases at elevated temperatures and the a-SiC exhibits slower creep rates compared to the a-SiCN films. The value of the universal constant x = 7 relating the Wp/Wt and H/E* was established and its applicability was demonstrated. Analysis of the experimental indentation data suggests a theoretical limit of hardness to elastic modulus ratio of 0.143.
引用
收藏
页码:1553 / 1564
页数:11
相关论文
共 50 条
  • [1] Mechanical properties of amorphous silicon carbonitride thin films at elevated temperatures
    Ctvrtlik, Radim
    Al-Haik, Marwan S.
    Kulikovsky, Valeriy
    JOURNAL OF MATERIALS SCIENCE, 2015, 50 (04) : 1553 - 1564
  • [2] Mechanical properties of silicon carbonitride thin films
    Peng, X. (xiaofengpengsh@hotmail.com), 1600, Japan Society of Applied Physics (42):
  • [3] Mechanical properties of silicon carbonitride thin films
    Peng, XF
    Hu, XF
    Wang, W
    Song, LX
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (2A): : 620 - 622
  • [4] Investigation of structural and mechanical properties of silicon carbonitride thin films
    Kumar, Dhruva
    Swain, Bibhu P.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 789 : 295 - 302
  • [5] Crystallization of HWCVD amorphous silicon thin films at elevated temperatures
    Muller, TFG
    Knoesen, D
    Arendse, C
    Swanepoel, R
    Halindintwali, S
    Theron, C
    THIN SOLID FILMS, 2006, 501 (1-2) : 98 - 101
  • [6] The influence of carbon on the structure and photoluminescence of amorphous silicon carbonitride thin films
    Khatami, Z.
    Wilson, P. R. J.
    Dunn, K.
    Wojcik, J.
    Mascher, P.
    NANOSCALE LUMINESCENT MATERIALS 2, 2012, 45 (05): : 153 - 160
  • [7] The influence of carbon on the structure and photoluminescence of amorphous silicon carbonitride thin films
    Khatami, Z.
    Wilson, P. R.
    Wojcik, J.
    Mascher, P.
    THIN SOLID FILMS, 2017, 622 : 1 - 10
  • [8] Process-dependent mechanical and optical properties of nanostructured silicon carbonitride thin films
    Khatami, Zahra
    Simpson, Peter J.
    Mascher, Peter
    NANOTECHNOLOGY, 2019, 30 (31)
  • [9] Amorphous hydrated silicon films deposited at elevated temperatures
    Golikova, OA
    Kazanin, MM
    Konkov, OI
    Kudoyarova, VK
    Terukov, EI
    SEMICONDUCTORS, 1996, 30 (03) : 226 - 230
  • [10] Hydrogen-induced mechanical properties of amorphous silicon thin films
    Shaik, Habibuddin
    Rao, Mohan G.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 38 : 165 - 170