New types of surface acoustoelectric waves and acoustic charge transport in GaAs crystals

被引:0
|
作者
A. K. Morocha
机构
[1] National Research University of Electronic Technology “MIET”,
来源
Semiconductors | 2014年 / 48卷
关键词
GaAs; Phase Velocity; Electric Potential; Drift Velocity; Propagation Parameter;
D O I
暂无
中图分类号
学科分类号
摘要
It is shown for the first time that longitudinal and transverse surface acoustoelectric waves can propagate in the basal plane of GaAs crystals. In contrast to well-known Gulyaev-Bleustein transverse waves, these waves are localized in a surface layer with a thickness on the order of the wavelength. The field of mechanical displacements and the electric-potential field of the wave are shifted in phase by π/2. The electric-field vector is circularly polarized in the sagittal plane. The effect of acoustoelectric charge transport by wave packets of new-type acoustoelectric waves is considered.
引用
收藏
页码:1689 / 1696
页数:7
相关论文
共 50 条