Impact of High-K Gate Stack on Subthreshold Performance of Double-Gate (DG) MOSFETs

被引：0
|
作者：
Ekta Goel
机构：
[1] Department of Electronics and Communication Engineering,
[2] NIT Warangal,undefined
来源：
Silicon | 2022年 / 14卷
关键词：
Surface potential; Threshold voltage; Subthreshold current; Swing; High-; dielectric; DG MOSFETs;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Two-dimensional (2D) analytical model for the subthreshold characteristics like Surface potential, threshold voltage, subthreshold current and swing of uniformly doped, high-k gate stack double-gate (DG) metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed in this paper. The minimum surface potential obtained by solving the 2D Poisson’s equation using evanescent mode analysis has been utilized to model the threshold voltage, subthreshold current and subthreshold swing. The effects of various parameters on these parameters have also been presented. The results show excellent matching with the numerical simulation data obtained by ATLAS™, a 2D device simulator from SILVACO.
引用
收藏
页码：11539 / 11544
页数：5
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