Density dependent cyclotron and intersubband resonance in inverted CdTe/HgTe/CdTe quantum wells

被引：6
|
作者：
Schultz, M
Merkt, U
Sonntag, A
Rossler, U
Colin, T
Helgesen, P
Skauli, T
Lovold, S
机构：
[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany
[2] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany
[3] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany
[4] Norwegian Def Res Estab, N-2007 Kjeller, Norway
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷
关键词：
HgTe; CdTe; quantum well; two-dimensional electron system; cyclotron resonance; intersubband resonance;
D O I：
10.1016/S0022-0248(98)80247-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Cyclotron and intersubband resonances in HgTe quantum wells in the inverted band regime are studied by Fourier-transform spectroscopy. Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow us to tune the electron density. In particular, we investigate filling factor dependent splittings of the cyclotron resonance in strong magnetic fields and a crossing of Landau levels of the conduction and valence subband. The experimental results are well described by a 6x6 k.p-model. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1180 / 1184
页数：5
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