Self-Aligned Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor Using A Two-Mask Process Without Etching-Stop Layer

被引：0

作者：

Fan, Ching-Lin ^{[1
,2
]}

Shang, Ming-Chi ^{[1
]}

Li, Bo-Jyun ^{[1
]}

Wang, Shea-Jue ^{[3
]}

Lee, Win-Der ^{[4
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Grad Inst Electroopt Engn, 43 Sec 4,Keelung Rd, Taipei 106, Taiwan

[2] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Keelung, Taiwan

[3] Natl Taipei Univ Technol, Inst Mat Sci & Engn, Taipei, Taiwan

[4] Lee Ming Inst Technol, Dept Elect Engn, New Taipei, Taiwan

来源：

2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2014年

关键词：

TEMPERATURE; TFTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with back-channel-etch (BCE) structure which can be fabricated by using only two photomasks, is presented. The process damage of back-channel can be avoided and the gate-to-source/drain capacitance of an a-IGZO TFT is significantly reduced. As a result, the more fast and low cost TFT circuits can be achieved.

引用

页码：129 / 132

页数：4

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