Resonance acceptor states and THz generation in uniaxially strained p-Ge

被引：0
|
作者：
Altukhov, IV
Chirkova, EG
Kagan, MS
Korolev, KA
Sinis, VP
Schmalz, K
Odnoblyudov, MA
Yassievich, IN
机构：
[1] Russian Acad Sci, Inst Radioengn & Elect, Moscow 103907, Russia
[2] Inst Semicond Phys, D-15230 Frankfurt, Germany
[3] AF Ioffe Physicotech Inst, St Petersburg, Russia
来源：
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词：
D O I：
10.4028/www.scientific.net/MSF.258-263.71
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The spectrum of stimulated THz emission from uniaxially compressed p-Ge is presented. The peaks corresponding to different optical transitions from resonance to ground and excited states of an acceptor were observed in the spectrum of stimulated emission. The peaks were identified by means of a comparison of experimental data with calculated acceptor level positions in dependence on pressure. The mechanism of a population inversion due to free carrier accumulation near energies of resonance acceptor states based on the resonance scattering is proposed.
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页码：71 / 75
页数：5
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