Energy Driven Modeling of OFF-state and Sub-Threshold Degradation in Scaled NMOS Transistors

被引：0
|
作者：
Varghese, D. [1 ]
Nandakumar, M. [1 ]
Tang, S. [1 ]
Reddy, V. [1 ]
Krishnan, S. [1 ]
机构：
[1] Texas Instruments Inc, Analog Technol Dev, Dallas, TX 75243 USA
来源：
2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2014年
关键词：
OFF-state drain stress; sub-threshold degradation; gate dielectric breakdown; energy-driven hot carrier model; lateral scaling; universal degradation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study OFF-state and sub-threshold degradation in scaled NMOS transistors and propose a unified channel current (IS) and drain-to-source voltage (VDS) dependent lifetime model for a wide range of bias conditions. The lifetime dependence on VDS suggests that degradation is limited by the maximum energy available for the channel electron in short channel transistors.
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页数：4
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