Synthesis of silicon nanowires

被引：0

作者：

Colli, A ^{[1
]}

Ferrari, AC ^{[1
]}

Hofman, S ^{[1
]}

Zapien, JA ^{[1
]}

Lifshitz, Y ^{[1
]}

Lee, ST ^{[1
]}

Piscanec, S ^{[1
]}

Cantoro, M ^{[1
]}

Robertson, J ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

ELECTRONIC PROPERTIES OF SYNTHETIC NANOSTRUCTURES | 2004年 / 723卷

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present alternative routes for the production of silicon nanowires (SiNWs). We have successfully synthesized SiNWs by plasma enhanced chemical vapor deposition, high temperature annealing, and thermal evaporation. Selective growth is achieved by using a patterned catalyst. Bulk production of SiNWs can be achieved by thermal evaporation.

引用

页码：445 / 448

页数：4

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