Investigations on Optical and Electronics Properties of Synthesized Graphene

The chemical synthesis of nanostructured materials are attracted towards electronic and optoelectronic applications. The Graphene Oxide was prepared by one of the principle methods of a time-saving improved Hummer's method. The formation of Graphene Oxide were confirmed by a Fourier-Transform Infrared spectroscopy (FT-IR). The Graphene can be produced from the pencil graphite. Graphene Oxide is an unique material noted as a single monomolecular layer of graphite with various oxygen- containing functional groups such as carbonyl and hydroxyl. The formed reduced graphene oxide resembling graphene but contains residual oxygen as well structural defects, this process is done when the Graphene Oxide is reduced. The Scanning Electron Microscope characterizes the microscopic morphologies of the sample. The Fourier Transform Spectroscopy is used to measure the structure of the samples or materials and also it is used to certify the existence of oxygen-containing functional groups. Comprehensive characterizations of the properties of Graphene Oxide films were conducted. In this preparation Graphene Oxide (GO) is used as a material in the solar cells. Graphene has the high electrical conductivity, and chemical stability. The confirmed sample is used to take the Ultraviolet spectroscopy (UV), Scanning Electron Microscopy (SEM), Current Voltage (IV) characteristics of Graphene Oxide is attained.