Resistance of the anodic PbO film formed in sulfuric acid solution

被引：0
|
作者：
Liu, HT [1 ]
Liang, HH [1 ]
Yang, J [1 ]
Zhou, WF [1 ]
机构：
[1] Fudan Univ, Dept Chem, Shanghai 200433, Peoples R China
来源：
CHINESE JOURNAL OF CHEMISTRY | 2000年 / 18卷 / 04期
关键词：
anodic PbO film; interstitial liquid; ac impedance;
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The resistance of the anodic PbO film formed on lead at 0.9 V (vs. Hg/Hg2SO4) in 4.5 mol/dm(3) H2SO4 was measured using alternating-current impedance method. The resistance of the anodic PbO film was found to be close to that of the interstitial liquid among the PbO particles in the film, suggesting that the interstitial liquid may serve as the major passage for ion transportation during the film growth.
引用
收藏
页码：489 / 494
页数：6
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