Bandgap narrowing and ethanol sensing properties of In-doped ZnO nanowires

被引：56
|
作者：
Li, L. M. [1 ]
Li, C. C. [1 ]
Zhang, J. [1 ]
Du, Z. F. [1 ]
Zou, B. S. [1 ]
Yu, H. C. [1 ]
Wang, Y. G. [1 ]
Wang, T. H. [1 ]
机构：
[1] Hunan Univ, Micronano Technol Res Ctr, Changsha 410082, Peoples R China
来源：
NANOTECHNOLOGY | 2007年 / 18卷 / 22期
关键词：
D O I：
10.1088/0957-4484/18/22/225504
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Indium doping effects on the optical and electrical properties of ZnO nanowires are investigated. The abnormal Raman spectrum shows only a peak centred at 439 cm(-1) related to high E-2 mode, which is due to In doping. The acceptor binding energy is estimated to be 93 meV from the results of temperature-dependent photoluminescence spectra. The redshift of the bandgap edge is attributed to a merging of donor and conduction bands. The sensitivity of the sensors fabricated from In-doped ZnO nanowires is about 3 - 1 ppm ethanol, and increases nearly linearly up to 27 as the ethanol concentration is raised to 100 ppm. Our results indicate that the In-doped ZnO nanowires have potential applications in fabricating optoelectrical devices and gas sensors.
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页数：4
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