Simple and Accurate Circuit Simulation Model for SiC Power MOSFETs

被引：54
|
作者：
Arribas, Alejandro Pozo [1 ]
Shang, Fei [1 ]
Krishnamurthy, Mahesh [1 ]
Shenai, Krishna [2 ]
机构：
[1] IIT, Dept Elect & Comp Engn, Chicago, IL 60616 USA
[2] Argonne Natl Lab, Argonne, IL 60439 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 02期
关键词：
Circuit model; dc-dc converter; efficiency; power MOSFET; Schottky diode; silicon carbide (SiC); synchronous operation;
D O I：
10.1109/TED.2014.2384277
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Simple and accurate circuit simulation models for high-voltage silicon carbide power MOSFETs and Schottky barrier diodes are presented and validated. The models are physics-based and consist of minimal number of model parameters that can be easily extracted from simple static I-V and C-V measurements. The models are used in a buck-boost bidirectional dc-dc converter, with and without an antiparallel Schottky diode. The efficiency of the converter was analyzed for synchronous and nonsynchronous operation of the switches. An optimal selection of the antiparallel Schottky diode is proposed to minimize the cost of the converter without compromising its efficiency.
引用
收藏
页码：449 / 457
页数：9
相关论文
共 50 条
  • [1] A Simple and Accurate Circuit Simulation Model for High-Voltage SiC Power MOSFETs
    Arribas, A. Pozo
    Krishnamurthy, M.
    Shenai, K.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 4, 2014, 64 (07): : 99 - 110
  • [2] Simple and Accurate Circuit Simulation Model for Gallium Nitride Power Transistors
    Shah, Krushal
    Shenai, Krishna
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (10) : 2735 - 2741
  • [3] An Accurate Electro-Thermal Model of SiC Power MOSFETs for Fast Simulations
    Lena, Davide
    Buraioli, Irene
    Bocca, Alberto
    Demarchi, Danilo
    Macii, Alberto
    2018 IEEE INTERNATIONAL CONFERENCE ON INDUSTRIAL TECHNOLOGY (ICIT), 2018, : 623 - 628
  • [4] Circuit-Based Electrothermal Simulation of Multicellular SiC Power MOSFETs Using FANTASTIC
    d'Alessandro, Vincenzo
    Codecasa, Lorenzo
    Catalano, Antonio Pio
    Scognamillo, Ciro
    ENERGIES, 2020, 13 (17)
  • [5] Short-Circuit Tests on SiC Power MOSFETs
    Castellazzi, Alberto
    Funaki, Tsuyoshi
    Kimoto, Tsunenobu
    Hikihara, Takashi
    2013 IEEE 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (IEEE PEDS 2013), 2013, : 1297 - 1300
  • [6] A simple and versatile overcurrent protection circuit for power MOSFETs
    Pol, Praveen V.
    Patil, Sanjaykumar L.
    Pandey, Sanjeev Kumar
    INTERNATIONAL JOURNAL OF ELECTRONICS, 2019, 106 (12) : 1864 - 1884
  • [7] Short-circuit Failure Mechanism of SiC Power MOSFETs
    Romano, G.
    Maresca, L.
    Riccio, M.
    d'Alessandro, V.
    Breglio, G.
    Irace, A.
    Fayyaz, A.
    Castellazzi, A.
    2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2015, : 345 - 348
  • [8] Requirements for Highly Accurate Multiphysics Modeling of SiC Power MOSFETs and Power Modules
    Grossner, U.
    Kakarla, B.
    Ziemann, T.
    Muting, J.
    Stark, R.
    Kovacevic-Badstuebner, I.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, 2017, 80 (07): : 89 - 100
  • [9] A Circuit Simulation Model for V-Groove SiC Power MOSFET
    Shintani, Michihiro
    Oishi, Kazuki
    Zhou, Rui
    Hiromoto, Masayuki
    Sato, Takashi
    2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2016, : 286 - 290
  • [10] Short-circuit robustness of SiC Power MOSFETs: experimental analysis
    Castellazzi, Alberto
    Fayyaz, Asad
    Yang, Li
    Riccio, Michele
    Irace, Andrea
    2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2014, : 71 - 74
12345