Portable Terahertz/Millimeter-Wave Spectrometer Based on SiGe BiCMOS Technology for Gas Sensing Applications

被引：1
|
作者：
Rothbart, Nick [1 ,2 ]
Schmalz, Klaus [3 ]
Huebers, Heinz-Wilhelm [1 ,2 ]
机构：
[1] German Aerosp Ctr DLR, Inst Opt Sensor Syst, Berlin, Germany
[2] Humboldt Univ, Dept Phys, Berlin, Germany
[3] IHP Leibniz Inst Innovat Mikroelekt, Frankfurt, Oder, Germany
来源：
2020 45TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2020年
关键词：
MILLIMETER;
D O I：
10.1109/IRMMW-THZ46771.2020.9370917
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a compact 45 x 60 cm(2) breadboard gas sensor system based on 220 to 270 GHz SiGe BiCMOS transmitter and receiver chips and a circular multi-pass gas absorption cell. To demonstrate sensitive gas detection capabilities, we measured gas mixtures of acetaldehyde and air with different concentration ratios. From that, we derive a detection limit of 20 ppm/root Hz for acetaldehyde.
引用
收藏
页数：2
相关论文
共 50 条
  • [1] Sensitive Millimeter-Wave/Terahertz Gas Spectroscopy Based on SiGe BiCMOS Technology
    Kissinger, D.
    Rothbart, N.
    Schmalz, K.
    Borngraeber, J.
    Huebers, H. -W.
    2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2018,
  • [2] SiGe HBT BiCMOS technology for millimeter-wave applications
    Joseph, A
    Dahlstrom, M
    Liu, QH
    Orner, B
    Liu, XF
    Sheridan, D
    Rassell, R
    Dunn, J
    Ahlgren, D
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3, 2006, 3 (03): : 448 - +
  • [3] Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies
    Kissinger, Dietmar
    Kahmen, Gerhard
    Weigel, Robert
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2021, 69 (10) : 4541 - 4560
  • [4] Integrated Circuits in SiGe BiCMOS for Millimeter-Wave and Terahertz Bioanalyzers
    Kissinger, Dietmar
    2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMP, 2022,
  • [5] Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology
    Forsten, Henrik
    Saijets, Jan H.
    Kantanen, Mikko
    Varonen, Mikko
    Kaynak, Mehmet
    Piironen, Petri
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2021, 69 (11) : 4689 - 4696
  • [6] SiGe technology requirements for millimeter-wave applications
    Wennekers, P
    Reuter, R
    PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2004, : 79 - 83
  • [7] SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems
    Zimmer, Thomas
    Boeck, Josef
    Buchali, Fred
    Chevalier, Pascal
    Collisi, Michael
    Debaillie, Bjorn
    Deng, Marina
    Ferrari, Philippe
    Fregonese, Sebastien
    Gaquiere, Christophe
    Ghanem, Haitham
    Hettrich, Horst
    Karakuzulu, Alper
    Maiwald, Tim
    Margalef-Rovira, Marc
    Maye, Caroline
    Moeller, Michael
    Mukherjee, Anindya
    Ruecker, Holger
    Sakalas, Paulius
    Schmid, Rolf
    Schneider, Karina
    Schuh, Karsten
    Templ, Wolfgang
    Visweswaran, Akshay
    Zwick, Thomas
    IEEE JOURNAL OF MICROWAVES, 2021, 1 (01): : 288 - 298
  • [8] Millimeter-wave Beamforming Circuits in SiGe BiCMOS
    Elkhouly, Mohamed
    Choi, Chang-Soon
    Glisic, Srdjan
    Scheytt, Christoph
    Ellinger, Frank
    2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2010, : 129 - 132
  • [9] Millimeter-Wave Bandpass Filter Based on Spiral Resonators and DGS Using SiGe BiCMOS Technology
    Liu, Yiqun
    Weng, Xiaoyu
    Xu, Kai-Da
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2023, 70 (07) : 2385 - 2389
  • [10] TSV Technology for Millimeter-Wave and Terahertz Design and Applications
    Hu, Sanming
    Wang, Lei
    Xiong, Yong-Zhong
    Lim, Teck Guan
    Zhang, Bo
    Shi, Jinglin
    Yuan, Xiaojun
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2011, 1 (02): : 260 - 267
12345