Low Write-Energy STT-MRAMs using FinFET-based Access Transistors

Spin-Transfer Torque Magnetic RAM (STT-MRAM) technology requires a high current in order to write data into memory cells, which gives rise to large access transistors in conventional MOS-accessed cells. On the other hand, FinFET devices offer higher ON current and denser layout compared with planar CMOS transistors. This paper thus proposes the design of an energy-efficient STT-MRAM cell which utilizes a FinFET access transistor. To assess the performance of the new cell, optimal layout-related parameters of the FinFET access transistor and the MTJ are analytically derived in order to minimize the STT-MRAM cell area. Afterwards, detailed cell-and architecture-level comparisons between FinFET-vs. MOS-accessed STT-MRAMs are performed. According to the comparison results, while the area of the MOS-accessed STT-MRAM increases significantly under 3ns write pulse width (tau(omega)), the FinFET-based design can effectively function under tau(omega) - 2ns, at the cost of slight increase in the memory area. Hence, the FinFET-accessed STT-MRAM offers denser area and higher energy efficiency compared with the conventional MOS-accessed counterpart.