Spin relaxation in multiple (110) quantum wells

被引:21
|
作者
Glazov, M. M. [1 ]
Semina, M. A. [1 ]
Sherman, E. Ya. [2 ,3 ]
机构
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Univ Basque Country, Dept Phys Chem, Bilbao 48080, Spain
[3] IKERBASQUE Basque Fdn Sci, Bilbao 48011, Bizkaia, Spain
来源
PHYSICAL REVIEW B | 2010年 / 81卷 / 11期
关键词
SPINTRONICS; ANISOTROPY; SYSTEMS;
D O I
10.1103/PhysRevB.81.115332
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of donors and spin-flip collisions of electrons from different quantum wells. We show that the screening of the Coulomb forces at low temperatures leads to a very strong enhancement of the spin relaxation time. In a degenerate electron gas, the Pauli blocking suppresses the electron-electron collisions, and the leading spin relaxation mechanism comes from the field of donors. If the electron gas is nondegenerate the electron-electron collisions and scattering by the ionized donors give similar contributions to the relaxation rate.
引用
收藏
页数:7
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